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Título: =Silicon Trends and Limits for Advanced Microprocessors.
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Publicación seriada
Referencias AnalíticasReferencias Analíticas
Autor: Bohr, Mark.
Título: Silicon Trends and Limits for Advanced Microprocessors.
Páginas/Colación: pp.80-87.; 28cm.; il.
Communications of the ACM Vol. 41, no. 3 March 1998
Información de existenciaInformación de existencia

Resumen
This article focuses on the latest trends and obstacles in the microprocessor industry over the past 25 years. Silicon process evolution continues to progress at an astounding pace. Metal Oxides Semiconductor (MOS) transistor scaling is offering benefits in density, speed, and power. Reduced transistor dimensions have been possible due to continued improvements in integrated circuit patterning technology and to the excellent scaling properties of MOS transistors. Much attention has been paid to transistor improvement in the course of integrated circuit development, while the on-chip interconnects have been a relatively minor factor in circuit performance. Still many challenges remain in meeting future transistor and interconnect requirements, but the early indications coming out of research organizations, plus the confidence that comes from the industry that has so successfully surmounted previous obstacles, suggest that integrated circuit technology will continue to progress at a healthy pace for at least three or four more generations. Beyond that point, financial and business considerations are likely to be the main factors limiting further advancements in silicon technology.

 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 

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