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Registro 1 de 2, Base de información bciucla |
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Información de existencia
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Palabras Claves:
MATCHED ASYMPTOTIC EXPANSIONS,
REACTION-DIFFUSION EQUATIONS,
SHARP INTERFACE MODELS,
SILICON OXIDATION |
Resumen
RESUMEN
RESUMEN
A simple
homogeneous reaction model in one dimension is presented in the
context of silicon oxidation. We investigate two different (canonical) regimes
for the oxidant diffusivity and show how these lead in the limit of
fast bulk reactions to distinct sharp interface models for
oxidation. The resulting heterogeneous models are moving boundary
problems which correspond to the classical Stefan problem or to the
Stefan problem with kinetic undercooling. The results are relevant
for more general reactions but illustrate some of the peculiarities
associated with silicon oxidation.
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Registro 2 de 2, Base de información bciucla |
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Información de existencia
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Palabras Claves:
ASYMPTOTIC EXPANSIONS,
SILICON OXIDATION |
Resumen
RESUMEN
A model for the isolation oxidation
of silicon, an important process in the fabrication of many integrated
circuits, is presented. The problem is two-dimensional with two moving
boundaries. Oxidant diffusion is modelled as
quasi-steady state and the oxide is assumed to be a Newtonian fluid. Asymptotic
techniques are applied to the case of reaction controlled oxidation, which
occurs for sufficiently thin oxides.
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